VS3508性能好价格实惠的快充配套MOS

VS3508AS
Maximum ratings, at T A =25°C, unless otherwise specified
Symbol Parameter Rating Unit
(BR)DSS
V
Drain-Source breakdown voltage -30 V
S
I Diode continuous forward current
A
T =25°C -3 A
D
I Continuous drain current@VGS=-10V
A
T =25°C -13 A
A
T =100°C -8.5 A
DM
I
Pulse drain current tested ①
A
T =25°C -52 A
EAS Avalanche energy, single pulsed ② 81 mJ
D
P Maximum power dissipation
A
T =25°C 3.1 W
V GS Gate-Source voltage ±20 V
MSL Level 3
STG
T
J
T Storage and operating temperature range -55 to 150 °C
Thermal Characteristics
Symbol Parameter Typical Unit
R θJL Thermal Resistance-Junction to Lead 24 °C/W
R θJA Thermal Resistance-Junction to Ambient 40 °C/W
Features
 P-Channel，-5V Logic Level Control
 Very low on-resistance RDS(on) @ V GS =-4.5 V
 Fast Switching
 Enhancement mode
 Pb-free lead plating; RoHS compliant
Part ID Package Type Marking Tape and reel information
VS3508AS SOP8 3508AS 3000pcs/Reel