VS4620GEMC40V/36AN-ChannelAdvancedPowerMOSFET

Features  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  Avalanche test
V DS 40 V R DS(on),TYP@ VGS=10 V 6.4 mΩ R DS(on),TYP@ VGS=4.5 V 10 mΩ I D(Silicon Limited) 54 A I D(Package Limited) 36 A
Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 40 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TC = 25°C 54 A ID Continuous drain current @VGS=10V (Silicon limited) TC = 25°C 54 A ID Continuous drain current @VGS=10V (Silicon limited) TC = 100°C 34 A ID Continuous drain current @VGS=10V (Wire bond limited) TC = 25°C 36 A IDM Pulse drain current tested ① TC = 25°C 150 A IDSM Continuous drain current @VGS=10V TA = 25°C 19 A TA = 70°C 15 A EAS Avalanche energy, single pulsed ② 20 mJ PD Maximum power dissipation TC = 25°C 30 W TC = 100°C 12 W PDSM Maximum power dissipation ③ TA = 25°C 3.6 W TA = 70°C 2.3 W TSTG,TJ Storage and Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol Parameter Typical Max Unit RθJC Thermal Resistance, Junction-to-Case 4.2 5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 35 42 °C/W