MoS2二硫化钼晶体合成(SyntheticMolybdenumDisulfide)

　　single crystal highly oriented synthetic 2h-phase mos2 crystals have been developed at our facilities in the usa starting from the powder making to crystallization. our crystals are well-known for its low defect density, ultra-flat surfaces, and high crystallinity. synthetic mos2 samples have excellent layer by layer stacking with very small (0.3 degree) mosaic spread which enables you to exfoliate large monolayers with minimal amount of effort. synthetic mos2 is an indirect gap semiconductor (1.2 ev) but becomes highly luminescent in the monolayer from at 1.9 ev (quasi-particle / optical band gap). synthetic mos2 crystals are superior to natural mos2 in in defects, electronic and optical performance, purity, and surface smoothness. please also see our nature small, medium, and large mos2 crystals.

　　the properties of synthetic mos2 crystals

　　publications from this product

　　summary: publications from cornell, washington, mit, berkeley, stanford, and princeton teams at top journals like nature, nature materials, nature communications, nano letters, and advanced materials

　　l. zhang. et.al. "photonic-crystal exciton-polaritons in monolayer semiconductors" nature communications volume 9, article number: 713 (2018)

　　weigao xu et al., "correlated fluorescence blinking in two-dimensional semiconductor heterostructures", nature 541, 62-67 (2017), link to article:

　　manish chhowalla team "phase-engineered low-resistance contacts for ultrathin mos2 transistors" nature materials doi: 10.1038/nmat4080

　　x. chen "probing the electron states and l-insulator transition mechanisms in molybdenum disulphide vertical heterostructures" nature communications 6, article number: 6088 (2015) doi:10.1038/ncomms7088

　　measurement of the optical dielectric function of monolayer transition-l dichalcogenides: mos2, mose2, ws2, and wse2, yilei li, alexey chernikov, xian zhang, albert rigosi, heather m. hill, arend m. van der zande, daniel a. chenet, en-min shih, james hone, and tony f. heinz; phys. rev. b 90, 205422 (2014)

　　h. wang et.al. "ultrafast response of monolayer molybdenum disulfide photodetector" nature communications 6, article number: 8831 (2015)

　　y. jin "a van der waals homojunction: ideal p–n diode behavior in mose2" advanced materials 27, 5534–5540 (2015)

　　tongay et. al. "defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons" scientific reports 3, article number: 2657 (2013)

　　x li et al. "determining layer number of twodimensional flakes of transition-l dichalcogenides by the raman intensity from substrates" nanotechnology 27 (2016) 145704

　　tongay et.al. thermally driven crossover from indirect toward direct bandgap in 2d semiconductors: mose2 versus mos2; nano letters, 2012, 12 (11), pp 5576–5580

　　manish chhowalla, "two-dimensional semiconductors for transistors" nature reviews materials 1, article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

　　d. wolverson et.al. "raman spectra of monolayer, few-layer, and bulk rese2: an anisotropic layered semiconductor" acs nano, 2014, 8 (11), pp 11154–11164

　　m. yankowitz et. al. "intrinsic disorder in graphene on transition l dichalcogenide heterostructures" nano letters, 2015, 15 (3), pp 1925–1929

　　h. c. diaz et.al. "molecular beam epitaxy of the van der waals heterostructure mote2 on mos2: phase, thermal, and chemical stability" 2d materials, volume 2, number 4 (2015)

　　a. gul et.al. "theoretical and experimental investigation of conjugation of 1,6-hexanedithiol on mos2" materials research express, 5 (3), 036415 (2018)

　　c. robert "optical spectroscopy of excited exciton states in mos2 monolayers in van der waals heterostructures" phys. rev. materials, 2, 011001 (r)