供应LY583312V6A

N-Channel MOSFET LY5833

LY 5833 Series N-channel enhancement mode
field-effect transistor ,produced with high cell density
DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly
suits low voltage applications, and low power
dissipation in a very small outline surface mount
package.

 20V/6.5A
R DS(ON) =16mΩ@ V GS =4.5V, I D =6.5A
R DS(ON) =21mΩ@VGS=2.5V, I D =5.5A
 High Density Cell Design For Ultra Low On-Resistance
 Subminiature surface mount package:SOT23-3L